低压熔断器 第4部分：保护半导体器件熔断体的补充要求

[中文适用范围]： 适用于包含半导体器件的设备，适用于最高 1000 V 交流电路至标称电压最高 1500 V 直流电路的电路 确定半导体熔断体的特性，以便可以用具有相同特性的其他熔断体替换它们它们的尺寸相同。定义了使用中操作的标准条件、熔断器的特性、标记、构造和测试的标准条件。附录 A 提供了熔断体与半导体器件配合的指南。注： - 与 IEC 269-1 一起阅读。 [外文原描述]： For application in equipment containing semiconductor devices for circuits up to 1000 V a.c. to circuits of nominal voltages up to 1500 V d.c. Establishes characteristics of semiconductor fuse-links in such a way that they can be replaced by other fuse-links having the same characteristics provided their dimensions are identical. Defines standard conditions for operation in service, characteristics of fuses, markings, standard conditions for construction and tests. Appendix A provides a guide for the coordination of fuse-links with semiconductor devices. Note: - To be read in conjunction with IEC 269-1.