标准摘要
[中文适用范围]： 本部分IEC 60747适用于以下类别的分立器件：变容二极管和快速关断二极管（用于调谐、上变频或谐波倍增、开关、限幅、相移、参量放大）；混频二极管和检波二极管；雪崩二极管（用于直接谐波生成、放大）；耿氏二极管（用于直接谐波生成）；双极晶体管（用于放大、振荡）；场效应晶体管（用于放大、振荡） [外文原描述]： IEC 60747-4:2007+A1:2017 Provides requirements for the following categories of discrete devices: variable capacitance diodes and snap-off diodes, mixer diodes and detector diodes, avalanche diodes, gunn diodes,bipolar transistors and field-effect transistors. This second edition cancels and replaces the first edition, published in 1991, its amendments 1, 2 and 3 (1993, 1999 and 2001, respectively), and constitutes a technical revision. This consolidated version consists of the second edition (2007) and its amendment 1 (2017). Therefore, no need to order amendment in addition to this publication.
英文名称Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors