标准摘要
[中文适用范围]： 本部分IEC 60747规定了以下类别的场效应晶体管的标准： - A类：结栅型； - B类：绝缘栅耗尽型（常开型）； - C类：绝缘栅增强型（常关型）。 由于场效应晶体管可能有一个或多个栅极，因此产生以下分类： 注1：肖特基势垒栅和绝缘栅器件包括耗尽型器件和增强型器件。 注2：某些应用的MOSFET在数据表中可能没有反向二极管特性。针对此类应用，正在开发消除体二极管的特殊电路元件结构。MOSFET应用（如电机控制设备）需要在MOSFET中指定反向二极管特性，以将反向二极管用作续流二极管。 注3：本标准仅使用C型的图形符号。本标准同样适用于P沟道以及A类和B类器件。 [外文原描述]： IEC 60747-8:2010+A1:2021 gives standards for the following categories of field-effect transistors: - type A: junction-gate type; - type B: insulated-gate depletion (normally on) type; - type C: insulated-gate enhancement (normally off) type. The main changes with respect to the previous edition are listed below. a) "Clause 3 Classification" was moved and added to Clause 1. b) "Clause 4 Terminology and letter symbols" was divided into "Clause 3 Terms and definitions" and "Clause 4 Letter symbols" was amended with additions and deletions. c) Clause 5, 6 and 7 were amended with necessary additions and deletions. This publication is to be read in conjunction with IEC 60747-1:2006 .
英文名称Semiconductor devices - Discrete devices - Part 8: Field-effect transistors