标准摘要
[中文适用范围]： IEC 60747的这一部分给出了以下类别场效应晶体管的标准： – A型：结栅型； – B型：绝缘栅耗尽（常开）型； – C型：绝缘栅增强（常闭）型。由于场效应晶体管可能有一个或多个栅极，因此分类结果如下： 注 1：肖特基势垒栅和绝缘栅器件包括耗尽型器件和增强型器件。注 2：某些应用的 MOSFET 可能没有数据表中的反向二极管特性。正在为此类应用开发消除体二极管的特殊电路元件结构。电机控制设备等 MOSFET 应用需要指定 MOSFET 中的反向二极管特性，以将反向二极管用作续流二极管。注 3：本标准中仅使用 C 型的图形符号。该标准同样适用于 P 沟道以及 A 型和 B 型器件。 [外文原描述]： IEC 60747-8:2010 gives standards for the following categories of field-effect transistors: - type A: junction-gate type; - type B: insulated-gate depletion (normally on) type; - type C: insulated-gate enhancement (normally off) type. The main changes with respect to the previous edition are listed below. a) "Clause 3 Classification" was moved and added to Clause 1. b) "Clause 4 Terminology and letter symbols" was divided into "Clause 3 Terms and definitions" and "Clause 4 Letter symbols" was amended with additions and deletions. c) Clause 5, 6 and 7 were amended with necessary additions and deletions. This publication is to be read in conjunction with IEC 60747-1:2006 .
英文名称Semiconductor devices - Discrete devices - Part 8: Field-effect transistors