标准摘要
[中文适用范围]： IEC 60749 的这一部分提供了一个测试程序，用于定义测试封装半导体集成电路和分立半导体器件的钴 60 (Co) 伽马射线源电离辐射（总剂量）效应的要求。该标准提供了加速退火测试，用于估计低剂量率电离辐射对设备的影响。这种退火测试对于低剂量率或设备可能表现出显着的时间依赖性效应的某些其他应用非常重要。本标准仅涉及稳态辐照，不适用于脉冲型辐照。它适用于军事和太空相关应用。该标准可能会导致辐照设备的电气性能严重退化，因此应被视为破坏性测试。 [外文原描述]： Provides a test procedure for defining requirements for testing packaged semiconductor integrated circuits and discrete semiconductor devices for ionizing radiation (total dose) effects from a cobalt-60 gamma ray source. Proposes an accelerated annealing test for estimating low dose rate ionizing radiation effects on devices. This annealing test is important for low dose rate or certain other applications in which devices may exhibit significant time-dependent effects. It is intended for military- and space-related applications.
英文名称Semiconductor devices - Mechanical and climatic test methods - Part 18: Ionizing radiation (total dose)