标准摘要
[中文适用范围]： 本部分IEC 60749提供了测试封装半导体集成电路和分立半导体器件在钴-60伽马射线源下的电离辐射（总剂量）效应的测试程序。其他合适的辐射源也可以使用。 本标准提供了加速退火测试，用于估计低剂量率电离辐射对器件的影响。这种退火测试对于低剂量率或某些其他应用中可能表现出显著时间依赖性效应的设备非常重要。 本程序包括四个测试：a)标准室温辐照测试；b)高温/低温辐照测试；c)加速退火测试；d)增强低剂量率敏感性(ELDRS)测试。 加速退火测试估计剂量率电离辐射对器件的影响对于低剂量率或某些其他应用中可能表现出显著时间依赖性效应的设备非常重要。ELDRS测试确定具有双极线性组件的器件是否对低剂量率下增强的辐射诱导损伤敏感。 本文件仅适用于稳态辐照，不适用于脉冲型辐照。 适用于军事和航空航天相关应用。 本文件可能导致辐照器件电性能的严重退化，因此应视为破坏性测试。 [外文原描述]： IEC 60749-18:2019 RLV contains both the official IEC International Standard and its Redline version. The Redline version is available in English only and provides you with a quick and easy way to compare all the changes between the official IEC Standard and its previous edition. IEC 60749-18:2019 provides a test procedure for defining requirements for testing packaged semiconductor integrated circuits and discrete semiconductor devices for ionizing radiation (total dose) effects from a cobalt-60 (60Co) gamma ray source. Other suitable radiation sources can be used. This document addresses only steady-state irradiations, and is not applicable to pulse type irradiations. It is intended for military- and aerospace-related applications. It is a destructive test. This edition includes the following significant technical changes with respect to the previous edition: - updates to subclauses to better align the test method with MIL-STD 883J, method 1019, including the use of enhanced low dose rate sensitivity (ELDRS) testing; - addition of a Bibliography, which includes ASTM standards relevant to this test method.
英文名称Semiconductor devices - Mechanical and climatic test methods - Part 18: Ionizing radiation (total dose)