标准摘要
[中文适用范围]： 本标准规定了用于测试封装半导体集成电路和分立半导体器件电离辐射（总剂量）效应的测试程序，辐射源为钴-60 (60Co) 伽马射线源。其他合适的辐射源也可使用。本程序包含四种测试：a) 标准室温照射测试；b) 高温/低温照射测试；c) 加速退火测试；d) 增强型低剂量率敏感性 (ELDRS) 测试。加速退火测试估算剂量率电离辐射效应对器件在低剂量率或某些其他应用中随时间显著变化的重要性。ELDRS 测试确定具有双极性线性组件的器件是否在低剂量率下表现出增强的辐射损伤敏感性。本文档仅适用于稳态照射，不适用于脉冲型照射。本文档旨在用于军事和航空航天相关应用。本文档可能会导致 irradiated 器件的电学性能严重退化，因此被视为破坏性测试。 [外文原描述]： IEC 60749-18:2019 provides a test procedure for defining requirements for testing packaged semiconductor integrated circuits and discrete semiconductor devices for ionizing radiation (total dose) effects from a cobalt-60 (60Co) gamma ray source. Other suitable radiation sources can be used. This document addresses only steady-state irradiations, and is not applicable to pulse type irradiations. It is intended for military- and aerospace-related applications. It is a destructive test. This edition includes the following significant technical changes with respect to the previous edition: - updates to subclauses to better align the test method with MIL-STD 883J, method 1019, including the use of enhanced low dose rate sensitivity (ELDRS) testing; - addition of a Bibliography, which includes ASTM standards relevant to this test method.
英文名称Semiconductor devices - Mechanical and climatic test methods - Part 18: Ionizing radiation (total dose)