半导体器件 - 机械和气候试验方法 - 第26部分:静电放电（ESD）灵敏度测试 - 人体模型（HBM）

[中文适用范围]： IEC 60749 的这一部分建立了测试、评估和分类组件和微电路的程序，根据其对暴露于定义的人体模型 (HBM) 静电放电 (ESD) 造成的损坏或退化的敏感性（敏感性）。本文档的目的是建立一种测试方法，该方法将复制 HBM 故障并提供可靠的@可重复的 HBM ESD 测试结果，无论组件类型如何。可重复的数据将允许对 HBM ESD 敏感度级别进行准确分类和比较。半导体器件的 ESD 测试选自本测试方法@机器模型 (MM) 测试方法（参见 IEC 60749-27）或 IEC 60749 系列中的其他 ESD 测试方法。除非另有说明，均选择该测试方法。 [外文原描述]： IEC 60749-26:2018 establishes the procedure for testing, evaluating, and classifying components and microcircuits according to their susceptibility (sensitivity) to damage or degradation by exposure to a defined human body model (HBM) electrostatic discharge (ESD). The purpose of this document is to establish a test method that will replicate HBM failures and provide reliable, repeatable HBM ESD test results from tester to tester, regardless of component type. Repeatable data will allow accurate classifications and comparisons of HBM ESD sensitivity levels. ESD testing of semiconductor devices is selected from this test method, the machine model (MM) test method (see IEC 60749-27) or other ESD test methods in the IEC 60749 series. Unless otherwise specified, this test method is the one selected. This fourth edition cancels and replaces the third edition published in 2013. This edition constitutes a technical revision. This standard is based upon ANSI/ESDA/JEDEC JS-001-2014. It is used with permission of the copyright holders, ESD Association and JEDEC Solid state Technology Association. This edition includes the following significant technical changes with respect to the previous edition: a) a new subclause relating to HBM stressing with a low parasitic simulator is added, together with a test to determine if an HBM simulator is a low parasitic simulator; b) a new subclause is added for cloned non-supply pins and a new annex is added for testing cloned non-supply pins.