标准摘要
[中文适用范围]： IEC 60749-34-1:2025 规定了一种测试方法，用于评估功率半导体模块承受由内部半导体及内部连接器功耗循环所引发的热应力和机械应力的能力。该标准基于 IEC 60749-34 制定，但专为功率半导体模块产品（包括绝缘栅双极型晶体管（IGBT）、金属氧化物半导体场效应晶体管（MOSFET）、二极管和晶闸管）而开发。若客户提出特定用途需求或需依据特定应用指南（例如 ECPE 指南 AQG 324），且该指南内容与本文件存在差异，则测试方法的细节可依据相关要求进行调整。该测试会导致器件老化，属于破坏性测试。 [外文原描述]： IEC 60749-34-1:2025 describes a test method that is used to determine the capability of power semiconductor modules to withstand thermal and mechanical stress resulting from cycling the power dissipation of the internal semiconductors and the internal connectors. It is based on IEC 60749-34, but is developed specifically for power semiconductor module products, including insulated-gate bipolar transistor (IGBT), metal-oxide-semiconductor field-effect transistor (MOSFET), diode and thyristor. If there is a customer request for an individual use or an application specific guideline (for example ECPE Guideline AQG 324), details of the test method can be based on these requirements if they deviate from the content of this document. This test caused wear-out and is considered destructive.
英文名称Semiconductor devices - Mechanical and climatic test methods - Part 34-1: Power cycling test for power semiconductor module