半导体器件.机械和环境测试方法.第34部分:电力循环

[中文适用范围]： IEC 60749 的这一部分描述了一种测试方法，用于确定半导体器件对由于内部半导体芯片和内部连接器的功率耗散循环而产生的热应力和机械应力的抵抗力。当周期性施加和消除正向导通的低压工作偏置（负载电流）时，会发生这种情况，导致温度快速变化。功率循环测试旨在模拟电力电子器件中的典型应用，并且是对高温工作寿命的补充（参见 IEC 60749-23）。暴露于该测试可能不会引起与暴露于空气到空气温度循环或使用两流体浴方法的温度快速变化相同的故障机制。该测试会导致磨损并被认为是破坏性的。注：本规范的目的不是提供寿命评估的预测模型。 [外文原描述]： IEC 60749-34:2010 describes a test method used to determine the resistance of a semiconductor device to thermal and mechanical stresses due to cycling the power dissipation of the internal semiconductor die and internal connectors. This happens when low-voltage operating biases for forward conduction (load currents) are periodically applied and removed, causing rapid changes of temperature. The power cycling test is intended to simulate typical applications in power electronics and is complementary to high temperature operating life (see IEC 60749-23). Exposure to this test may not induce the same failure mechanisms as exposure to air-to-air temperature cycling, or to rapid change of temperature using the two-fluid-baths method. This test causes wear-out and is considered destructive. This second edition cancels and replaces the first edition published in 2004 and constitutes a technical revision. The significant changes with respect from the previous edition include: - the specification of tighter conditions for more accelerated power cycling in the wire bond fatigue mode; - information that under harsh power cycling conditions high current densities in a thin die metalization might initiate electromigration effects close to wire bonds.