标准摘要
[中文适用范围]： IEC 60749 的这一部分建立了测量带有存储器的半导体器件在受到 α 辐射等高能粒子影响时的软错误敏感性的程序。描述了两个测试；使用阿尔法辐射源的加速测试和（非加速）实时系统测试，其中在自然发生的辐射（可以是阿尔法或其他辐射（例如中子））的条件下产生任何错误。为了完全表征具有存储器的集成电路的软错误能力，必须使用额外的测试方法对设备进行广泛的高能谱和热中子测试。该测试方法可以应用于任何类型的具有存储器件的集成电路。 [外文原描述]： This part of IEC 60749 establishes a procedure for measuring the soft error susceptibility of semiconductor devices with memory when subjected to energetic particles such as alpha radiation. Two tests are described; an accelerated test using an alpha radiation source and an (unaccelerated) real-time system test where any errors are generated under conditions of naturally occurring radiation which can be alpha or other radiation such as neutron. To completely characterize the soft error capability of an integrated circuit with memory, the device must be tested for broad high energy spectrum and thermal neutrons using additional test methods. This test method may be applied to any type of integrated circuit with memory device.
英文名称Semiconductor devices - Mechanical and climatic test methods - Part 38: Soft error test method for semiconductor devices with memory