标准摘要
[中文适用范围]： IEC 60749 这部分的目的是测试和确定在不施加电应力的情况下在高温下存储的所有固态电子设备的影响。该测试通常用于确定存储条件下时间和温度对固态电子设备（包括非易失性存储设备（数据保留故障机制））的热激活故障方法和故障时间的影响。该测试被认为是非破坏性的，但最好用于设备鉴定。如果使用此类设备进行输送，则需要评估这种高度加速的压力测试的效果。使用阿伦尼乌斯加速方程对热激活故障机制进行建模，有关测试温度和持续时间选择的指南可在 IEC 60749-43 中找到。 [外文原描述]： IEC 60749-6:2017 is to test and determine the effect on all solid state electronic devices of storage at elevated temperature without electrical stress applied. This test is typically used to determine the effects of time and temperature, under storage conditions, for thermally activated failure methods and time-to-failure of solid state electronic devices, including non-volatile memory devices (data-retention failure mechanisms). This test is considered non-destructive but should preferably be used for device qualification. If such devices are used for delivery, the effects of this highly accelerated stress test will need to be evaluated. Thermally activated failure mechanisms are modelled using the Arrhenius equation for acceleration, and guidance on the selection of test temperatures and durations can be found in IEC 60749-43. This edition includes the following significant technical changes with respect to the previous edition: a) additional test conditions; b) clarification of the applicability of test conditions.
英文名称Semiconductor devices - Mechanical and climatic test methods - Part 6: Storage at high temperature