地面光伏组件.设计鉴定和型式认证.第2部分:试验程序

[中文适用范围]： 本文件规定了适合在露天气候中长期运行的陆地光伏组件设计资格的要求。通过资格认证的组件的使用寿命取决于其设计、环境及运行条件。测试结果不应被解释为对组件寿命的定量预测。 在运行温度第98百分位数超过70°C的气候条件下，建议用户考虑按照IEC TS 63126进行更高温度测试条件。对于期望寿命较短的光伏产品，建议用户考虑按照IEC TS 63163（正在开发中）进行消费电子产品光伏测试。希望确认IEC 61215测试特性在制造产品中一致性的用户，可参考IEC 62941关于光伏制造质量体系的内容。 本文件适用于所有陆地平板组件材料，包括晶体硅组件类型和薄膜组件。 本文件不适用于聚光太阳光下使用的组件，但可用于低聚光组件（1至3个太阳光）。对于低聚光组件，所有测试均使用设计聚光水平下的辐照度、电流、电压和功率进行。 本测试序列的目的是确定组件的电气特性，并在合理的成本和时间限制内尽可能证明组件能够承受长期户外暴露。加速测试条件基于重现选定现场故障所需的经验条件，并平等应用于所有组件类型。加速因子可能因产品设计而异，因此并非所有退化机制都会显现。有关加速测试方法的更多一般信息，包括术语定义，可参考IEC 62506。 由于产生故障所需时间长且大面积应力条件昂贵，某些长期退化机制只能通过组件测试合理检测。已达到足够成熟度以高置信度设置通过/失败标准的组件测试通过添加到IEC 61215-1:2021表1中纳入IEC 61215系列。相比之下，本系列和IEC 61215-2中描述的测试程序是在组件上进行的。 [外文原描述]： IEC 61215-2:2021 RLV contains both the official IEC International Standard and its Redline version. The Redline version is available in English only and provides you with a quick and easy way to compare all the changes between the official IEC Standard and its previous edition. IEC 61215-2:2021 lays down requirements for the design qualification of terrestrial photovoltaic modules suitable for long-term operation in open-air climates. This document is intended to apply to all terrestrial flat plate module materials such as crystalline silicon module types as well as thin-film modules. The objective of this test sequence is to determine the electrical characteristics of the module and to show, as far as possible within reasonable constraints of cost and time, that the module is capable of withstanding prolonged exposure outdoors. This second edition of IEC 61215-2 cancels and replaces the first edition of IEC 61215-2 issued in 2016. This edition includes the following significant technical changes with respect to the previous edition: a. Addition of cyclic (dynamic) mechanical load testing (MQT 20). b. Addition of a test for detection of potential-induced degradation (MQT 21). c. Addition of test methods required for bifacial PV modules. d. Addition of test methods required for flexible modules. This includes the addition of the bending test (MQT 22). e. Revision of simulator requirements to ensure uncertainty is both well-defined and minimized. f. Correction to the hot spot endurance test, where the procedure for monolithically integrated (MLI) thin film technologies (MQT 09.2) previously included two sections describing a procedure only appropriate for silicon modules. g. Selection of three diodes, rather than all, for testing in the bypass diode thermal test (MQT 18). h. Removal of the nominal module operating test (NMOT), and associated test of performance at NMOT, from the IEC 61215 series.