半导体器件微机电器件第31部分:层状MEMS材料界面结合能的四点弯曲试验方法

[中文适用范围]： IEC 62047的本部分规定了一种基于断裂力学概念的四点弯曲测试方法，用于测量分层微机电系统（MEMS）中最弱界面的界面粘附能。在各种MEMS器件中@存在许多层状材料界面@，它们的粘附能对于MEMS器件的可靠性至关重要。四点弯曲测试利用施加到分层 MEMS 器件@测试件上的纯弯矩，并根据最弱界面稳态裂纹的临界弯矩测量界面粘附能。该测试方法适用于半导体基板上沉积有薄膜层的MEMS器件。薄膜层的总厚度应比支撑基板（通常是硅晶片）的厚度小100倍。 [外文原描述]： IEC 62047-31:2019 (E) specifies a four-point bending test method for measuring interfacial adhesion energy of the weakest interface in the layered micro-electromechanical systems (MEMS) based on the concept of fracture mechanics. In a variety of MEMS devices, there are many layered material interfaces, and their adhesion energies are critical to the reliability of the MEMS devices. The four-point bending test utilizes a pure bending moment applied to a test piece of layered MEMS device, and the interfacial adhesion energy is measured from the critical bending moment for the steady state cracking in the weakest interface. This test method applies to MEMS devices with thin film layers deposited on semiconductor substrates. The total thickness of the thin film layers should be 100 times less than the thickness of a supporting substrate (typically a silicon wafer piece).