半导体器件 微机电设备 第45部分：基于硅的MEMS制造技术——纳米结构冲击阻力测量方法

[中文适用范围]： IEC 62047-45:2025规定了硅基微机电系统（MEMS）中采用微加工技术制备的纳米结构抗冲击性能的要求和测试方法。本文件适用于采用微电子技术工艺和其他微加工技术制备的纳米结构的原位抗冲击性能测量。在MEMS器件生产过程中，由于微纳米尺寸的原因，制备的非理想效应与宏观尺度相比被大大放大，制备物中可能出现表面缺陷、线宽损失和残余应力，导致MEMS器件的机械强度发生剧烈波动。本文件规定了一种基于MEMS技术的纳米结构抗冲击性能的原位测量方法，以提取实际制备结构的冲击强度。该测试方法不需要复杂的仪器（如扫描探针显微镜和纳米压痕仪）和特殊的测试样品。由于本文提出的原位片上测试仪可以作为标准检测模式植入到器件制造过程中，因此本文可以提供一个桥梁，使制造部分可以为设计部分提供一些定量的参考。 [外文原描述]： IEC 62047-45:2025 specifies the requirements and testing method to measure the impact resistance of nanostructures which are fabricated by micromachining technology used in silicon-based micro-electromechanical system (MEMS). This document is applicable to the in-situ impact resistance measurement of nanostructures manufactured by microelectronic technology process and other micromachining technology. In the production of MEMS devices, due to the micro/nano size, the non-ideal effect of fabrication is greatly amplified compared with the macroscale. Surface defects, line width loss, and residual stress can occur in the fabricated object, resulting in severe fluctuations in the mechanical strength of MEMS devices. This document specifies an in-situ measurement method for the impact resistance of nanostructures based on MEMS technology to extract the impact strength of actual manufactured structures. This test method does not need intricated instruments (such as scanning probe microscopy and nanoindenter) and special test specimens. Since the in-situ on-chip tester in this document can be implanted in device fabrication as a standard detection pattern, this document can provide a bridge, by which the fabrication part can give some quantitative reference for the design part.