标准摘要
[中文适用范围]： 本部分IEC 62047规定了测量微结构弯曲强度的要求和测试方法，这些微结构是通过微加工技术制造的，用于硅基微机电系统（MEMS）。 本文件适用于通过微电子技术工艺和其他微加工技术制造的微结构的原位弯曲强度测量。 随着器件尺寸的缩小，由缺陷和污染引起的弯曲强度退化变得更加严重。本文件规定了一种基于MEMS技术的弯曲强度原位测试方法。本文件不需要复杂的仪器（如扫描探针显微镜和纳米压痕仪）和特殊的测试样品。 由于本文件中的原位片上测试仪和器件是在同一晶圆上通过相同的工艺制造的，因此本文件可以为设计部分提供一些实际的参考。 [外文原描述]： IEC 62047-47:2024 specifies the requirements and testing method to measure the bending strength of microstructures which are fabricated by micromachining technology used in silicon-based micro-electromechanical system (MEMS). This document is applicable to the in-situ bending strength measurement of microstructures manufactured by microelectronic technology process and other micromachining technology. With the devices scaling, the bending strength degradation, induced by defects and contaminations, becomes more severe. This document specifies an in-situ testing method of the bending strength based on MEMS technique. This document does not need intricate instruments (such as scanning probe microscopy and nanoindenter) and special test specimens. Since in-situ on-chip tester in this document and device are fabricated with the same process on the same wafer, this document can give some practical reference for the design part.
英文名称Semiconductor devices - Micro-electromechanical devices - Part 47: Silicon based MEMS fabrication technology - Measurement method of bending strength of microstructures