标准摘要
[中文适用范围]： 该标准描述了晶圆到晶圆键合@键合工艺类型（例如硅到硅熔合键合@硅到玻璃阳极键合@等@）的键合强度测量方法以及MEMS加工/组装期间适用的结构尺寸。适用晶圆厚度范围为10 ??至数毫米。 [外文原描述]： IEC 62047-9:2011 describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly. The applicable wafer thickness is in the range of 10 ohmm to several millimeters. The contents of the corrigendum of March 2012 have been included in this copy.
英文名称Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS