用于表面声波（锯）的单晶硅片器件应用 - 规格和测量方法

[中文适用范围]： 本文件适用于合成石英@铌酸锂（LN）@钽酸锂（LT）@四硼酸锂（LBO）@和硅酸镧镓（LGS）单晶晶片的制造，这些单晶晶片用作表面声波制造中的基材(SAW) 滤波器和谐振器。 [外文原描述]： IEC 62276:2016 applies to the manufacture of synthetic quartz, lithium niobate (LN), lithium tantalate (LT), lithium tetraborate (LBO), and lanthanum gallium silicate (LGS) single crystal wafers intended for use as substrates in the manufacture of surface acoustic wave (SAW) filters and resonators. This edition includes the following significant technical changes with respect to the previous edition: - Corrections of Euler angle indications in Table 1 and axis directions in Figure 3. - Definition of "twin" is not explained clearly enough in 3.3.3. Therefore it is revised by a more detailed definition. - Etch channels maximum number at quartz wafer of seed which do not pass through from surface to back surface are classified for three grades in 4.2.13 a). Users use seed portions of quartz wafers for devices. They request quartz wafers with less etch channels in seeds to reduce defects of devices. The classification of etch channels in seed may prompt a rise in quartz wafer quality.