标准摘要
[中文适用范围]： 本标准提供了晶圆级测试程序，以确定金属氧化物半导体场效应晶体管中氧化物层中的正移动电荷量。 。它适用于有源场效应晶体管和寄生场效应晶体管。移动电荷可能会导致微电子器件退化，例如通过改变 MOSFET 的阈值电压或通过双极晶体管中的基极反转。 [外文原描述]： IEC 62417:2010 provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.
英文名称Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)