标准摘要
[中文适用范围]： IEC 62880 的这一部分描述了一种恒温（等温）老化方法，用于测试微电子晶圆上的铜 (Cu) 金属化测试结构对应力诱发空洞 (SIV) 的敏感性。该方法主要在技术开发期间的晶圆级生产中进行，其结果将用于寿命预测和故障分析。在某些条件下@该方法可以应用于包级测试。由于测试时间较长，此方法不适用于检查生产批次的发货@。双镶嵌铜金属化系统通常在蚀刻到介电层的沟槽底部和侧面具有衬里，例如钽 (Ta) 或氮化钽 (TaN)。因此，对于单个通孔与其下方的宽线接触的结构，通孔下方的空隙几乎可以在满足故障标准的任何百分比电阻变化的同时导致开路。 [外文原描述]： IEC 62880-1:2017(E) describes a constant temperature (isothermal) aging method for testing copper (Cu) metallization test structures on microelectronics wafers for susceptibility to stress-induced voiding (SIV). This method is to be conducted primarily at the wafer level of production during technology development, and the results are to be used for lifetime prediction and failure analysis. Under some conditions, the method can be applied to package-level testing. This method is not intended to check production lots for shipment, because of the long test time.
英文名称Semiconductor devices - Stress migration test standard - Part 1: Copper stress migration test standard