标准摘要
[中文适用范围]： IEC 62899的这一部分规定了通过传输长度法（TLM）测量印刷薄膜晶体管（TFT）接触电阻的方法。该方法需要制造源极和漏极电子之间具有不同沟道长度 (L) 的测试元件组 (TEG) [外文原描述]： IEC 62899-503-3:2021(E) specifies a measuring method of contact resistance for printed thin film transistors (TFTs) by the transfer length method (TLM). The method requires the fabrication of a test element group (TEG) with varying channel length (L) between source and drain electrodes. The method is intended for quality assessment of TFT electrode contacts and is suited for determining whether the contact resistance lies within a desired range.
英文名称Printed electronics - Part 503-3: Quality assessment - Measuring method of contact resistance for the printed thin film transistor - Transfer length method