标准摘要
[中文适用范围]: 本文提供了一种方法,用于评估安装在模块中的旁路二极管是否容易受到热失控的影响,或者是否有足够的冷却使其能够在从正向偏压操作到反向偏压操作的转变中幸存下来而不会过热。该测试方法特别适合测试肖特基势垒二极管@,肖特基势垒二极管@具有在高温下随着反向偏置电压的函数而增加泄漏电流的特性@,使其更容易受到热失控的影响。采用P/N二极管作为旁路二极管的测试样本可以免除本文要求的热失控测试,因为P/N二极管承受反向偏压的能力足够高。 [外文原描述]: IEC 62979:2017 provides a method for evaluating whether a bypass diode as mounted in the module is susceptible to thermal runaway or if there is sufficient cooling for it to survive the transition from forward bias operation to reverse bias operation without overheating. This test methodology is particularly suited for testing of Schottky barrier diodes, which have the characteristic of increasing leakage current as a function of reverse bias voltage at high temperature, making them more susceptible to thermal runaway.
英文名称Photovoltaic modules - Bypass diode - Thermal runaway test