标准摘要
[中文适用范围]： 本文档规定了三维集成电路（3-D IC）接口设计中所需的硅通孔（TSV）电特性参考模型，以及用于指定3-D IC中TSV特性的电阻和电容测量条件。本文档涵盖的三维集成电路规格如下：应用：数字消费类和移动类设备；工作电压：0.1 V至5.0 V；工作频率：低于2.0 GHz。本文档未描述测量设备。图1描述了本文档讨论的多芯片互连系统的典型情况。功率器件、射频（RF）器件和微机电系统（MEMS）不属于本文档的范围。 [外文原描述]： IEC 63011-3:2018 specifies a reference model of through-silicon via (TSV) electrical characteristics required for an interface design in three dimensional integrated circuit (3-D IC) to transmit and receive digital data and measurement conditions for resistance and capacitance to specify TSV characteristics in 3-D IC. Power devices, RF devices and micro-electromechanical systems (MEMS) are not in the scope of this document.
英文名称Integrated circuits - Three dimensional integrated circuits - Part 3: Model and measurement conditions of through-silicon via