标准摘要
[中文适用范围]： IEC 63068 的本部分对原生 4H-SiC（碳化硅）外延层中的缺陷进行了分类。这些缺陷根据其晶体结构进行分类，并通过明场 OM（光学显微镜）、PL（光致发光）和 XRT（X 射线形貌成像）等非破坏性检测方法进行识别。 [外文原描述]： IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.
英文名称Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects