标准摘要
[中文适用范围]： IEC 63068 的这一部分提供了使用光学检测来检测市售 4H-SiC（碳化硅）外延晶圆中生长缺陷的定义和指南。此外，本文档还举例说明了光学图像，以便能够对 SiC 同质外延晶圆的缺陷进行检测和分类。本文件涉及缺陷的非破坏性测试方法，因此优先蚀刻等破坏性方法不在本文件的范围内。 [外文原描述]： IEC 63068-2:2019(E) provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies optical images to enable the detection and categorization of the defects for SiC homoepitaxial wafers. This document deals with a non-destructive test method for the defects so that destructive methods such as preferential etching are out of scope in this document.
英文名称Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection