标准摘要
[中文适用范围]： 本文档提供了在商业可用的4H-SiC（碳化硅）外延片上用于检测原生缺陷的荧光检测的定义和使用指南。此外，本文档示例了荧光图像和发射光谱，以实现对碳化硅同质外延片缺陷的检测和分类。 [外文原描述]： IEC 63068-3:2020 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies photoluminescence images and emission spectra to enable the detection and categorization of the defects in SiC homoepitaxial wafers.
英文名称Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence