半导体器件.碳化硅衬底上氮化镓外延膜缺陷的分类

[中文适用范围]： 本国际标准为在碳化硅（SiC）衬底上生长的氮化镓（GaN）外延薄膜中的缺陷定义和分类提供指南。这些缺陷主要基于示例，通过示意图、光学显微镜图像和透射电子显微镜图像进行识别和描述。本文件仅涵盖在SiC衬底上生长的GaN外延薄膜中的缺陷，不包括由后续工艺引起的缺陷。 [外文原描述]： IEC 63229:2021(E) gives guidelines for the definition and classification of defects in GaN epitaxial film grown on SiC substrate. They are identified and described on the basis of examples, mainly by schematic illustrations, optical microscope images, and transmission electron microscope images for these defects. This document covers only defects in as-grown GaN epitaxial film on SiC substrate and does not include defects caused by subsequent processes.