标准摘要
[中文适用范围]： 本部分 IEC 63275 给出了测试方法以及使用该方法的程序，用于评估碳化硅 (SiC) 功率 MOSFET 器件因体二极管工作而导致的通态电压变化、通态电阻变化和反向漏电压变化。此测试通常不针对 Si 功率晶体管。 [外文原描述]： IEC 63275-2:2022 gives the test method and a procedure using this method to evaluate the on-state voltage change, on-state resistance change and reverse drain voltage change of silicon carbide (SiC) power MOSFET devices due to body diode operation. This test is not generally requested for Si power transistors.
英文名称Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation