碳化硅MOSFET阈值电压测量指南

[中文适用范围]： IEC 63505:2025 提供了 SiC 功率 MOSFET 中 VT 测量方法和 VT 测试前的调节指南，以减少或消除上述滞后的影响。该方法适用于 PBTI 测试，NBTI 和开关事件引起的阈值电压变化不在本标准范围内。SiC MOSFET 存在由瞬态陷阱效应引起的阈值电压滞后，这会影响对偏置温度不稳定性 (BTI) 等应力测试引起的 VT 漂移的实际评估。 [外文原描述]： IEC 63505:2025 gives guidance on VT measurement methods and conditioning prior to VT testing in SiC power MOSFETs to reduce or eliminate the effect of the aforementioned hysteresis. The method is applicable for PBTI testing, NBTI and threshold voltage changes caused by switching events are excluded from the scope. SiC MOSFETs have threshold voltage hysteresis caused by transient trap effects, which impacts the evaluation of the actual the VT shift caused by stress tests such as bias temperature instabilities (BTI).