标准摘要
[中文适用范围]： IEC 63601:2026 适用于基于碳化硅（SiC）的电力电子器件（PECS），这些器件通过栅极绝缘区域的偏压来控制器件的导通和关断。通常这指的是金属氧化物半导体（MOS）器件，例如金属氧化物半导体场效应晶体管（MOSFET）和绝缘栅双极型晶体管（IGBT）。在本文件中，仅讨论N型MOS（NMOS）器件，因为它们在电力器件应用中占主导地位；然而，这些程序同样适用于P型MOS（PMOS）器件。本文件不定义器件的失效标准、可接受的使用条件或可接受的寿命目标，这些由器件制造商和用户自行决定。然而，本文件提供了应力测试程序，以便能够展示和评估阈值电压随时间的变化，这种变化受到栅极偏压和温度的影响。 [外文原描述]： IEC 63601:2026 covers SiC-based PECS devices having a gate dielectric region biased to turn devices on and off. This typically refers to MOS devices such as MOSFETs and IGBTs. In this document, only NMOS (N-type MOS) devices are discussed as these are dominant for power device applications; however, the procedures apply to PMOS (P-type MOS) devices as well. This document does not define device failure criteria, acceptable use conditions or acceptable lifetime targets. That is up to the device manufacturers and users. However, it provides stress procedures such that the threshold voltage stability over time as affected by gate bias and temperature can be demonstrated and evaluated.
英文名称Guideline for evaluating bias temperature instability of silicon carbide metal-oxide-semiconductor devices for power electronic conversion