数据手册中表示SIC MOSFET开关损耗的指导原则

[中文适用范围]： 1 适用范围 本文件规定了如何正确显示具有栅极绝缘层区域的碳化硅（SiC）基电力电子控制器件（PECS）的基本参数，这些器件通过栅极绝缘层区域的偏置来实现器件的开启与关闭。通常，这指的是金属-氧化物-半导体（MOS）器件，如金属-氧化物-半导体场效应晶体管（MOSFET）和绝缘栅双极型晶体管（IGBT）。在本文件中，只讨论N沟道MOS器件，因为它们在功率器件应用中占主导地位；不过，所描述的程序也适用于P沟道MOS器件。与硅基功率MOSFET不同，碳化硅功率MOSFET的某些方面需要专门的方法，以确保在数据表中正确表示器件参数。以下段落中详细解释了这些内容，其中包括一些最重要的主题，例如：显著提高的开关速度和高漏源电压（VDS）；测试设置对参数的显著影响（见第5章）；体二极管对负栅极偏压的依赖性以及V G(off)值随器件实际情况而产生的限制。本文件未定义器件失效标准、可接受的使用条件或可接受的寿命目标，这些内容由器件制造商和用户自行决定。然而，本文件提供了应力测试程序，以确保受栅极偏压和时间影响的阈值电压稳定性。 [外文原描述]： IEC 63602:2026 specifies how to correctly display essential parameters of SiC-based PECS devices having a gate dielectric region biased to turn devices on and off. This typically refers to MOS devices such as MOSFETs and IGBTs. In this document, only NMOS devices are discussed as these are dominant for power device applications; however, the procedures apply to PMOS devices as well. In contrast to silicon power MOSFETs certain aspects of SiC power MOSFETs require a dedicated approach in order to represent device parameters correctly in the datasheet. Details are explained in the following paragraphs, among others the most important topics are: - substantially higher switching speeds ad high VDS; - strong impact of test setup (see Clause 5); - impact of body diode as a function of the applied negative gate bias ant the limitations arising for the VG(off) values depending on the actual device. This document does not define device failure criteria, acceptable use conditions or acceptable lifetime targets. That is up to the device manufacturers and users. However, it provides stress procedures such that the threshold voltage stability over time as affected by gate bias and temperature can be demonstrated and evaluated.