使用电压源换流器（VSC）的高压直流（HVDC）输电

[中文适用范围]： 本文件提供了关于用于高压直流（HVDC）电力传输的电压源换流器（VSC）的一般指导。它描述了不仅电压源（包含电容性能量存储介质且直流电压极性保持固定）而且自换向的换流器，使用可以通过控制动作开启和关闭的半导体器件。范围包括带有脉宽调制（PWM）的2级和3级换流器，以及多级换流器、模块化多级换流器和级联2级换流器，但不包括在方波输出模式下无PWM操作的2级和3级换流器。使用电压源换流器的HVDC电力传输称为“VSC传输”。本文档描述了可用于VSC传输的各种电路类型，以及它们的主要操作特性和典型应用。总体目标是为购买者提供指导，以帮助指定VSC传输方案。线换向和电流源换流器明确排除在本文件之外。 [外文原描述]： IEC TR 62543:2022 RLV contains both the official IEC International Standard and its Redline version. The Redline version is available in English only and provides you with a quick and easy way to compare all the changes between the official IEC Standard and its previous edition. IEC TR 62543:2022 gives general guidance on the subject of voltage sourced converters (VSC) used for transmission of power by high voltage direct current (HVDC). It describes converters that are not only voltage sourced (containing a capacitive energy storage medium and where the polarity of DC voltage remains fixed) but also self-commutated, using semiconductor devices which can both be turned on and turned off by control action. The scope includes 2‑level and 3-level converters with pulse-width modulation (PWM), along with multi-level converters, modular multi-level converters and cascaded two-level converters, but excludes 2‑level and 3-level converters operated without PWM, in square-wave output mode. HVDC power transmission using voltage sourced converters is known as "VSC transmission". The various types of circuit that can be used for VSC transmission are described in this document, along with their principal operational characteristics and typical applications. The overall aim is to provide a guide for purchasers to assist with the task of specifying a VSC transmission scheme. Line-commutated and current-sourced converters are specifically excluded from this document. This edition includes the following significant technical changes with respect to the previous edition: - in Clause 3, some redundant definitions which were identical to those listed in IEC 62747 have been deleted; - in 4.3.4, description and diagrams have been added for the cases of a bipole with dedicated metallic return and a rigid bipole; - in 4.4, mention is made of the bi-mode insulated gate transistor (BiGT) and injection enhanced gate transistor (IEGT) as possible alternatives to the IGBT; - in 5.6, the reference to common-mode blocking reactors has been deleted since these are very rarely used nowadays.