标准摘要
[中文适用范围]： 本文档描述了有源器件嵌入基板的翘曲控制以及确定翘曲的参量，这些参量在封装组装过程中非常有用。翘曲结果利用翘曲驱动力、抵抗力和中性轴进行解释，适用于典型的有源器件（芯片）嵌入基板，其中离散有源芯片放置在基板核心中，并通过直接铜键合与基板互连。同样的原理适用于其他器件嵌入基板。尽管其他器件嵌入基板的详细结构可能不同，但翘曲参量的来源和确定方法相同，因此本报告的目的是帮助工程师通过应用这一原理来提高其产品的翘曲行为。 [外文原描述]： IEC TR 62878-2-8:2021(E) describes a warpage control of active device embedded substrate along with parameters for determining warpage, which are useful during package assembly. Warpage results are explained using warpage driving force, resistance and neutral axis, for typical die embedded substrate, where the discrete active dies are placed in the core of substrate and interconnected to the substrate by direct Cu bonding. The same principles are applicable in other device embedded substrates. Even though the detailed structure of other device embedded substrates might be different, the origin and determination of the parameters of warpage are the same and thus the purpose of this report is to help engineers improve the warpage behaviours of their products by applying this principle.
英文名称Device embedding assembly technology - Part 2-8: Guidelines - Warpage control of active device embedded substrate