标准摘要
[中文适用范围]： All current amendments available at time of purchase are included with the purchase of this document. [外文原描述]： IEC TS 62607-12-3:2026, which is a Technical Specification, establishes a standardized method to determine the key control characteristic • Schottky barrier height (SBH) from the temperature-dependent current–voltage characterization results obtained from two-dimensional (2D) material-based electronic devices. This document • defines the Schottky barrier formed from the interface between a 2D material and a metal; • specifies a 2D device sample for the measurement of the Schottky barrier; • specifies the measurement procedure for the Schottky barrier formed at the interface within 2D devices; • provides proper mathematical formulas used to extract the Schottky barrier formed from 2D-materials-based devices; • provides relevant case studies; and • provides relevant references
英文名称Nanomanufacturing - Key control characteristics - Part 12-3: 2D material-related products - Schottky barrier heights of 2D material-based field-effect transistors: temperature-dependent current–voltage measurements