纳米制造.关键控制特性.第6-10部分:石墨烯基材料.薄片电阻:太赫兹时域光谱法

[中文适用范围]： 本文件建立了用于通过太赫兹时域光谱法（THz-TDS）确定石墨烯基材料薄膜的关键控制特性 - 方块电阻（Rs）的标准方法。该方法将太赫兹脉冲发射到石墨烯基材料上，在时域中测量透射或反射的太赫兹波形，并通过快速傅里叶变换（FFT）转换到频域。最后，将频谱拟合到Drude模型（或其他可比模型）以获得方块电阻。该方法为非接触式、无损、快速且鲁棒的石墨烯薄膜大面积映射方法，无样品尺寸上限。适用于统计过程控制、不同供应商生产的石墨烯薄膜比较、获取微观缺陷（如晶界和缺陷）信息，以及由于无损特性和访问埋入导电层的能力而逐步分析工艺修改和开发。该方法适用于通过化学气相沉积（CVD）或其他方法生长在或转移到介电基底（包括但不限于石英、二氧化硅、硅、蓝宝石、碳化硅和聚合物）上的石墨烯。最小空间分辨率约为300 µm（在1 THz时），由太赫兹脉冲的衍射极限光斑尺寸决定。 [外文原描述]： IEC TS 62607-6-10:2021(E) establishes a standardized method to determine the electrical key control characteristic – sheet resistance (Rs) for films of graphene-based materials by – terahertz time domain spectroscopy (THz-TDS). In this technique, a THz pulse is sent to the graphene-based material. The transmitted or reflected THz waveform is measured in the time domain and transformed to the frequency domain by the fast Fourier transform (FFT). Finally, the spectrum is fitted to the Drude model (or another comparable model) to obtain the sheet resistance. • This non-contact inspection method is non-destructive, fast and robust for the mapping of large areas of graphene films, with no upper sample size limit. • The method is applicable for statistical process control, comparison of graphene films produced by different vendors, or to obtain information about imperfections on the microscale such as grain boundaries and defects, etc. • The method is applicable for graphene grown by chemical vapour deposition (CVD) or other methods on or transferred to dielectric substrates, including but not limited to quartz, silica (SiO2), silicon (Si), sapphire, silicon carbide (SiC) and polymers. • The minimum spatial resolution is in the order of 300 µm (at 1 THz) given by the diffraction limited spot size of the THz pulse.