纳米制造.关键控制特性.第6-16部分:二维材料.载流子浓度:场效应晶体管法

[中文适用范围]： IEC TS 62607 的第 6-16 部分规定了一种标准化方法，用于通过场效应晶体管（FET）方法确定半导体二维材料的关键控制特性——载流子浓度。对于半导体二维材料，载流子浓度是通过测量掺杂工艺后转移曲线获得的电压偏移来评估的。FET 测试结构由源极、漏极和栅极三个端子组成，通过施加电压来诱导晶体管动作。转移曲线是通过在接地源极的情况下，施加变化的栅极电压和恒定的漏极电压并测量漏极电流获得的。该方法适用于具有带隙的半导体二维材料，如过渡金属二硫族化物（MoS2、MoTe2、WS2、WSe2等）和黑磷。本方法不适用于无带隙的纯石墨烯，但可用于具有带隙的其他石墨烯（例如半导体氧化石墨烯）。测量结果有助于评估该技术是否可用于未来的电气子系统或电子器件应用。 [外文原描述]： IEC TS 62607:2022 establishes a standardized method to determine the key control characteristic carrier concentration for semiconducting two-dimensional materials by the field effect transistor (FET) method. For semiconducting two-dimensional materials, the carrier concentration is evaluated using a field effect transistor (FET) test by a measurement of the voltage shift obtained from transfer curve upon doping process. The FET test structure consists of three terminals of source, drain, and gate where voltage is applied to induce the transistor action. Transfer curves are obtained by measuring drain current while applying varied gate voltage and constant drain voltage with respect to the source which is grounded.