纳米制造.关键控制特性.第6-3部分:石墨烯基材料.磁畴尺寸:衬底氧化

[中文适用范围]： IEC TS 62607-6-3 建立了一种标准化方法，用于确定通过化学气相沉积 (CVD) 在铜上生长的石墨烯薄膜的结构关键控制特性——域尺寸，采用基板氧化法。该方法提供了一种快速、简便且可靠的手段，用于评估铜箔或铜薄膜上形成的石墨烯域，以理解石墨烯域尺寸对石墨烯性能的影响，并提高基于 CVD 石墨烯的高速、柔性及透明器件的性能。根据本文件测定的域尺寸将作为关键控制特性列入石墨烯的空详规格 IEC 62565-3-1 中。域密度是等效的测量指标。本方法导出的域尺寸定义为供应商指定的观察面积 (以 cm² 或 µm² 为单位) 内域尺寸的平均值。该方法适用于通过 CVD 在铜上生长的石墨烯。表征是在将石墨烯转移到最终基板之前在铜箔上进行的。由于该方法具有破坏性，样品不能重新投入制造过程。 [外文原描述]： IEC TS 62607:2020 establishes a standardized method to determine the structural key control characteristic – domain size for films consisting of graphene grown by chemical vapour deposition (CVD) on copper by – substrate oxidation. It provides a fast, facile and reliable method to evaluate graphene domains formed on copper foil or copper film for understanding the effect of the graphene domain size on properties of graphene and enhancing the performance of high speed, flexible, and transparent devices using CVD graphene. – The domain size determined in accordance with this document will be listed as a key control characteristic in the blank detail specification for graphene IEC 62565-3-1. Domain density is an equivalent measure. – The domain size as derived by this method is defined as the mean value of size of the domains in the observed area specified by supplier in terms of cm2 or µm2. – The method is applicable for graphene grown on copper by CVD. The characterization is done on the copper foil before transfer to the final substrate. – As the method is destructive, the samples cannot be re-launched into the fabrication process.