纳米制造 - 关键控制特性 - 第6-33部分：石墨烯相关产品 - 石墨烯缺陷密度：电子能量损失谱法

[中文适用范围]： IEC TS 62607-6-33:2025是一项技术规范，它建立了一种标准化方法，用于通过透射电子显微镜（TEM）中的电子能量损失谱（EELS）确定单层石墨烯薄膜的关键控制特性——缺陷密度（%，nm²）。本文件概述了一种在纳米尺度上定量测量石墨烯中缺陷的方法。本文件中规定的方法适用于通过化学气相沉积（CVD）、卷对卷生产以及剥离得到的石墨烯薄片，以估算缺陷密度。为了获得可靠的数据，从制备TEM样品到其观察，每种指定条件下的操作过程必须保持一致。通过调整光束对准，确保空间分辨率达到1 nm以下。覆盖碳K边附近的整个能量损失近边结构（ELNES）区域并保持最高能量分辨率的色散值为0.1 eV/ch。石墨烯中的缺陷是通过测量sp²杂化原子与sp²/sp³杂化原子之间的光谱差异来确定的，该差异是通过计算π*和σ*轨道光谱的振幅比获得的。 [外文原描述]： IEC TS 62607-6-33:2025, which is a Technical Specification, establishes a standardized method to determine the key control characteristic • defect density (%, nm2) of single layer graphene films by • electron energy loss spectroscopy (EELS in transmission electron microscopy (TEM)). This document outlines a method for quantitative measurement of defects in graphene at the nanoscale. The method specified in this document is applicable to single layer graphene acquired via chemical vapour deposition (CVD), roll-to-roll production and exfoliated graphene flakes to estimate the defect density. In order to obtain reliable data, it is essential that the procedure is consistent for each specified condition from the preparation of the TEM specimen to its observation. It is essential to maintain the spatial resolution below 1 nm by alignment of the beam. The dispersion value, which covers the entire energy loss near edge structure (ELNES) region of the carbon-K edge and maintains the highest energy resolution corresponds to 0,1 eV/ch. Defects in graphene are determined by measuring the spectral differences between sp2 hybridized and sp2/sp3 hybridized atoms, which are obtained by calculating the amplitude ratio of the π* and σ* orbital spectra.