纳米制造 关键控制特性 第 6-8 部分：石墨烯 方块电阻：串联四点探针

[中文适用范围]： 本部分IEC TS 62607建立了一种确定关键控制特性的方法 - 薄层电阻 \(R_{\mathrm{S}}\) [以欧姆每平方 \((\Omega / \mathrm{sq})\) 为单位测量], 通过 - 在线四点探针法，\(4 P P\)。 薄层电阻 \(R_{\mathrm{S}}\) 是通过在平面样品表面上放置四个电极进行的四端电阻测量得出的。 - 使用本文件描述的方法，石墨烯样品的 \(R_{\mathrm{S}}\) 测量范围从 \(10^{-2} \Omega / \mathrm{sq}\) 到 \(10^{4} \Omega / \mathrm{sq}\)。 - 该方法适用于CVD石墨烯，前提是将其转移到石英基板或其他绝缘材料（石英、\(\mathrm{SiO}_{2}\) 在 \(\mathrm{Si}\) 上，以及从碳化硅生长的石墨烯。 - 该方法与van der Pauw方法（IEC 62607-6-7）在薄层电阻测量方面互补，当无法可靠地在样品边界上放置接触点时，该方法可能有用。 [外文原描述]： IEC TS 62607-6-8:2023 establishes a method to determine the key control characteristic sheet resistance RS [measured in ohm per square (Ω/sq)], by the in-line four-point probe method, 4PP. The sheet resistance RS is derived by measurements of four-terminal electrical resistance performed on four electrodes placed on the surface of the planar sample. The measurement range for RS of the graphene samples with the method described in this document goes from 10−2 Ω/sq to 104 Ω/sq. The method is applicable for CVD graphene provided it is transferred to quartz substrates or other insulating materials (quartz, SiO2 on Si, as well as graphene grown from silicon carbide. The method is complementary to the van der Pauw method (IEC 62607-6-7) for what concerns the measurement of the sheet resistance and can be useful when it is not possible to reliably place contacts on the sample boundary.