光伏(PV)组件 - 潜在诱导衰减检测的试验方法 - 第1部分: 晶体硅

[中文适用范围]： IEC TS 62804-1:2025 规定了评估晶体硅光伏（PV）组件在短期高压应力作用下的耐久性的程序，主要针对由潜在诱导退化（PID）引起的性能下降。该标准提供了三种测试方法。第一种方法有两种变体，在黑暗条件下进行，主要用于评估PID引起的短路效应。第二种方法也有两种变体，引入了紫外线因素，用于评估PID的极化效应。此外，还包含一种专门用于评估在紫外线照射下PID极化恢复能力的测试。本文件适用于具有钝化介电层的晶体硅光伏组件，适用于由移动离子影响硅半导体上的电场或与硅半导体发生电子相互作用所引发的退化机制。本文件不适用于评估薄膜技术、串联或异质结器件模块，但可作为指导参考。模块在系统电压应力下的实际耐久性取决于其运行时的环境条件以及模块相对于地（地面）的电压电位。这些测试旨在评估光伏组件对PID的敏感性，而不论其在不同气候和系统中实际运行时所承受的应力如何。 [外文原描述]： IEC TS 62804-1:2025 defines procedures to evaluate the durability of crystalline silicon photovoltaic (PV) modules to the effects of short-term high-voltage stress, primarily potential-induced degradation (PID). Three test methods are given. The first type, which has two variations, is conducted in the dark and is primarily designed for assessing PID-shunting. The second type, which also has two variations, incorporates the factor of ultraviolet light and is intended for assessing PID-polarization. A separate test for the recovery of PID polarization under ultraviolet light is also included. The testing in this document is designed for crystalline silicon PV modules with silicon cells having passivating dielectric layers, for degradation mechanisms involving mobile ions influencing the electric field over the silicon semiconductor or electronically interacting with the silicon semiconductor. This document is not intended for evaluating modules with thin-film technologies, tandem, or heterojunction devices but can be used for guidance. The actual durability of modules to system voltage stress depends on the environmental conditions under which they are operated and the voltage potential in the module relative to earth (ground). These tests are intended to assess PV module sensitivity to PID irrespective of actual stresses under operation in different climates and systems.