表面化学分析.深度剖面.用单层和多层薄膜在X射线光电子能谱、俄歇电子能谱和二次离子质谱中测定溅射速率的方法

[中文适用范围]： 本文件规定了一种在设定溅射条件下使用单层或多层参考样品（其材料层与需要深度校准的材料相同的层）测量其溅射速率来校准材料溅射深度的方法。 当使用 AES、XPS 和 SIMS 进行溅射深度分析时，对于 20 nm 至 200 nm 厚的层，该方法的典型精度为 5% 至 10%。 溅射速率由参考样品中相关界面之间的层厚度和溅射时间确定，并且与溅射时间一起使用以给出待测量样品的厚度。 确定的离子溅射速率可用于预测各种其他材料的离子溅射速率，以便可以通过溅射产率和原子密度的表格值来估计这些材料的深度尺度和溅射时间。 [外文原描述]： This document specifies a method for the calibration of the sputtered depth of a material from a measurement of its sputtering rate under set sputtering conditions using a single- or multi-layer reference sample with layers of the same material as that requiring depth calibration. The method has a typical accuracy in the range of 5 % to 10 % for layers 20 nm to 200 nm thick when sputter depth profiled using AES, XPS and SIMS. The sputtering rate is determined from the layer thickness and the sputtering time between relevant interfaces in the reference sample and this is used with the sputtering time to give the thickness of the sample to be measured. The determined ion sputtering rate can be used for the prediction of ion sputtering rates for a wide range of other materials so that depth scales and sputtering times in those materials can be estimated through tabulated values of sputtering yields and atomic densities.