标准摘要
ISO 17560:2014 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal, or amorphous silicon specimens with boron atomic concentrations between 1 × 10 16 atoms/cm 3 and 1 × 10 20 atoms/cm 3 , and to crater depths of 50 nm or deeper.
英文名称Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in silicon