精细陶瓷（高级陶瓷，高级工业陶瓷）.分析掺硼和掺氮SiC晶体的多类型的紫外光致发光图像试验方法

[中文适用范围]： 本文件规定了使用紫外光致发光（UVPL）成像确定碳化硅（SiC）晶片或块状晶体中的多型及其比率的测试方法。 SiC的范围仅限于掺杂有氮和硼的半导体SiC，分别具有深的受主能级和浅的施主能级。 本文讨论的 SiC 晶圆或块状晶体通常表现出 10−3 ohm·cm 至 10−2 ohm·cm 范围内的电阻率，适用于电力电子器件。 该方法适用于分别含有硼和氮作为受体和供体的 SiC 晶体 4H、6H 和 15R 多型，其浓度可产生供体-受体对 (DAP) 以产生 UVPL。 在 4H-SiC 中，硼和氮的浓度通常在 1016 cm−3 到 1018 cm−3 之间。 半绝缘碳化硅无需担心，因为它通常含有极少量的硼和氮。 因此无法达到深层次。 [外文原描述]： This document specifies a test method for determining the polytypes and their ratios in silicon carbide (SiC) wafers or bulk crystals using ultraviolet photoluminescence (UVPL) imaging. The range of SiC is limited to semiconductor SiC doped with nitrogen and boron to have a deep acceptor level and a shallow donor level, respectively. The SiC wafers or bulk crystals discussed in this document typically show electrical resistivities ranging from 10 −3 ohm · cm to 10 −2 ohm · cm, applicable to power electronic devices. This method is applicable to the SiC-crystal 4H, 6H and 15R polytypes that contain boron and nitrogen as acceptor and donor, respectively, at concentrations that produce donor-acceptor pairs (DAPs) to generate UVPL. In 4H-SiC the boron and nitrogen concentrations typically range from 10 16 cm −3 to 10 18 cm −3 . Semi-insulating SiC is not of concern because it usually contains minimal boron and nitrogen; therefore deep level cannot be achieved.