标准摘要
[中文适用范围]： 本国际标准规定了一种使用多层δ层参考材料在硅的二次离子质谱（SIMS）深度剖析中，对小于50 nm深的浅层区域进行深度标定的程序。本国际标准不适用于溅射速率未达到稳态的表面瞬变区域。本国际标准适用于单晶硅、多晶硅和非晶硅。 [外文原描述]： ISO 23812:2009 specifies a procedure for calibrating the depth scale in a shallow region, less than 50 nm deep, in SIMS depth profiling of silicon, using multiple delta-layer reference materials. It is not applicable to the surface-transient region where the sputtering rate is not in the steady state. It is applicable to single-crystalline silicon, polycrystalline silicon and amorphous silicon.
英文名称Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth calibration for silicon using multiple delta-layer reference materials