精细陶瓷（先进陶瓷、先进技术陶瓷

[中文适用范围]： 本标准对单晶氮化镓（GaN）衬底或单晶GaN薄膜上出现的各类表面缺陷中的位错和工艺缺陷进行了分类，适用于以下类型GaN衬底或薄膜表面暴露的位错和工艺缺陷： — 单晶GaN衬底； — 在单晶GaN衬底上同质外延生长形成的单晶GaN薄膜； — 在单晶氧化铝（Al2O3）、碳化硅（SiC）或硅（Si）衬底上异质外延生长形成的单晶GaN薄膜。如果表面法线与GaN的c轴之间的锐角绝对值≥8°，则不适用于暴露在表面的缺陷。 [外文原描述]： This document gives a classification of the dislocations and process-induced defects, from among the various surface defects, that occur on single-crystal gallium nitride (GaN) substrates or single-crystal GaN films. It is applicable to the dislocations and process-induced defects exposed on the surface of the following types of GaN substrates or films: — single-crystal GaN substrate; — single-crystal GaN film formed by homoepitaxial growth on a single-crystal GaN substrate; — single-crystal GaN film formed by heteroepitaxial growth on a single-crystal aluminium oxide (Al 2 O 3 ), silicon carbide (SiC) or silicon (Si) substrate. It is not applicable to defects exposed on the surface if the absolute value of the acute angle between the surface normal and the c -axis of GaN is ≥ 8°.