精细陶瓷（先进陶瓷、先进技术陶瓷） GaN晶体表面缺陷的测试方法 第2部分：蚀坑密度的测定方法

[中文适用范围]： 本文件描述了一种测定蚀刻坑密度的方法，用于检测单晶 GaN 衬底或单晶 GaN 薄膜上出现的位错和加工引入的缺陷。它适用于 ISO 5618-1 规定的缺陷，这些缺陷出现在以下类型的 GaN 衬底或薄膜的表面上：单晶 GaN 衬底；在单晶 GaN 衬底上同质外延生长形成的单晶 GaN 薄膜；或在单晶 Al2O3、SiC 或 Si 衬底上异质外延生长形成的单晶 GaN 薄膜。它适用于蚀刻坑密度 ≤ 7 × 107 cm-2 的缺陷。 [外文原描述]： This document describes a method for determining the etch pit density, which is used to detect dislocations and processing-introduced defects that occur on single-crystal GaN substrates or single-crystal GaN films. It is applicable to the defects specified in ISO 5618-1 from among the defects exposed on the surface of the following types of GaN substrates or films: single-crystal GaN substrate; single-crystal GaN film formed by homoepitaxial growth on a single-crystal GaN substrate; or single-crystal GaN film formed by heteroepitaxial growth on a single-crystal Al 2 O 3 , SiC, or Si substrate. It is applicable to defects with an etch pit density of ≤ 7 × 10 7 cm -2 .